FDS89161 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ

SMD Type
N-Channel Enhancement MOSFET
FDS89161 (KDS89161)
MOSFET
■ Features
● VDS (V) = 100V
● ID = 2.7 A
● RDS(ON) ＜ 105mΩ (VGS = 10V)
● RDS(ON) ＜ 160mΩ (VGS = 4.5V)
● High performance trench technology for extremely low rDS(on)
● CDM ESD Protection Level > 2KV typical
SOP-8
D2 ₅
D2 ₆
Q2
D1 7
D1
8_atings
Q1
Ta
=
25
4 ^G2
3 ^S2
2 G1
1 S1
1.50 0.15
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous
Pulsed
Single Pulse Avalanche Energy
(Note1)
Power Dissipation
Tc=25℃
Ta=25℃
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
EAS
PD
RthJA
RthJC
TJ
Tstg
Note 1.Starting TJ = 25 °C, L = 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V.
2. 78°C/W when mounted on a 1 in2pad of 2 oz coppe
Rating
100
±20
2.7
15
13
31
1.6
78
4
150
-55 to 150
Unit
V
A
mJ
W
℃/W
℃
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