FDS2672 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

SMD Type
N-Channel MOSFET
FDS2672 (KDS2672)
MOSFET
■ Features
● VDS (V) = 200V
● ID = 3.9A (VGS = 10V)
● RDS(ON) ＜ 70mΩ (VGS = 10V)
● RDS(ON) ＜ 80mΩ (VGS = 6V)
5
6
7
8
SOP-8
4
3
2
1
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current -Continuous
Pulsed Drain Current
Single Pulse Avalanche Energy (Note.1)
Power Dissipation
(Note.2)
(Note.3)
Thermal Resistance.Junction- to-Ambient (Note.2)
(Note.3)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
EAS
PD
RthJA
RthJC
TJ
Tstg
Rating
200
±20
3.9
50
37.5
2.5
1
50
125
25
150
-55 to 150
Note.1: Starting TJ = 25°C, L = 3mH, IAS = 5A, VDD = 100V, VGS = 10V
Note.2: 50°C/W (10 sec) 62.5°C/W steady stat when mounted on a 1in ² pad of 2 oz copper
Note.3 :125°C/W when mounted on a minimum pad
Unit
V
A
mJ
W
℃/W
℃
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