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FDN352AP Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Single P-Channel, PowerTrench | |||
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SMD Type
P-Channel MOSFET
FDN352AP (KDN352AP)
â Features
â VDS (V) =-30V
â ID =-1.3 A (VGS =-10V)
â RDS(ON) ï¼ 180mΩ (VGS =-10V)
â RDS(ON) ï¼ 300mΩ (VGS =-4.5V)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.1
D
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
G
S
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note.1)
(Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Rating
-30
±25
-1.3
-10
0.5
0.46
250
75
150
-55 to 150
Note.1: RθJA= 250°C/W when mounted on a 0.02 in2 pad of 2oz. copper.
Note.2: RθJA= 270°C/W when mounted on a 0.001 in 2 pad of 2oz. copper.
Unit
V
A
W
â/W
â
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