FDMC3612 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

SMD Type
N-Channel MOSFET
FDMC3612 (KDMC3612)
MOSFET
■ Features
● VDS (V) = 100V
● ID = 12A
● RDS(ON) ＜ 110mΩ (VGS = 10V)
● RDS(ON) ＜ 122mΩ (VGS = 6V)
● Low Profile - 1 mm max in Power 33
D5
D6
D7
D8
4G
3S
2S
1S
DFN 3X3
Top
8765
1 234
Bottom
DDD D
GS S S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current -Continuous
Tc=25℃ (Package limited)
Tc=25℃ (Silicon limited)
Ta=25℃ (Note.1)
Continuous Drain Current -Pulsed
Single Pulse Avalanche Energy (Note.2)
Power Dissipation
Tc=25℃
Ta=25℃ (Note.1)
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
EAS
PD
RthJA
RthJC
TJ
Tstg
Note.1: 53 °C/W when mounted on a 1 in² pad of 2 oz copper
Note.2: Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.
Rating
100
±20
16
12
3.3
15
32
35
2.3
53
3.5
150
-55 to 150
Unit
V
A
mJ
W
℃/W
℃
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