FDG6301N Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Dual N-Channel, Digital FET

SMD Type
Dual N-Channel MOSFET
FDG6301N (KDG6301N)
MOSFET
■ Features
● VDS (V) = 25V
● ID = 220m A (VGS = 4.5V)
● RDS(ON) ＜ 4Ω (VGS = 4.5V)
● RDS(ON) ＜ 5Ω (VGS = 2.7V)
● Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
1 or 4
6 or 3
2 or 5
5 or 2
3 or 6
4 or 1
1 S1 4 S2
2 G1 5 G2
3 D2 6 D1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous
Pulsed
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model(100 pF / 1500 W)
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
ESD
PD
RthJA
TJ
Tstg
Rating
25
±8
220
650
6
300
415
150
-55 to 150
Unit
V
mA
KV
mW
℃/W
℃
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