FDC2512 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 150V N-Channel PowerTrench MOSFET

SMD Type
N-Channel Enhancement MOSFET
FDC2512 (KDC2512)
MOSFET
■ Features
● VDS (V) = 150V
● ID = 1.4A (VGS = 10V)
● RDS(ON) ＜ 425mΩ (VGS = 10V)
● RDS(ON) ＜ 475mΩ (VGS = 6V)
D¹
D2
G3
6_D
5_D
4_S
( _SOT-23-6 )
0.4^+0.1
-0.1
6
5
4
1
2
3
+0.01
-0.01
+0.2
-0.1
Unit: mm
0.15 ^+0.02
-0.02
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
*1a
- Pulsed
Power Dissipation
*1a
*1b
Thermal Resistance.Junction- to-Ambient *1a
Thermal Resistance.Junction- to-Case
*1
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
PD
RthJA
RthJC
TJ
Tstg
Rating
150
±20
1.4
8
1.6
0.8
78
30
150
-55 to 150
Unit
V
A
W
℃/W
℃
*1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. R_{θ JC is guaranteed by design}
while RθCA is determined by the user's board design.
*1a.78°C/W when mounted on a 1in2 pad of 2 oz copper
*1b.156°C/W when mounted on a minimum pad of 2 oz copper
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