FCX717 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON POWER (SWITCHING) TRANSISTOR

SMD Type
Transistors
PNP Silicon Power Switching Transistor
FCX717
Features
2W power dissipation.
10A peak pulse current.
Excellent HFE characteristics up to 10 Amps.
Extremely low saturation voltage E.g. 12mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 77mÙ at 3A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Symbol
Rating
Unit
VCBO
-12
V
VCEO
-12
V
VEBO
-5
V
ICM
-10
A
Peak pulse current
Base current
Power dissipation
Operating and storage temperature range
IC
-3
A
IB
-500
mA
Ptot
1
W
Tj,Tstg
-55 to +150
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