FCX619 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR

SMD Type
Transistors
NPN Silicon Power Switching Transistor
FCX619
Features
2W power dissipation.
6A peak pulse current.
Excellent HFE characteristics up to 6 amps.
Extremely low saturation voltage E.g. 13mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 87mÙ at 2.75A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
ICM
6
A
IC
3.0
A
Base current
Power dissipation
Operating and storage temperature range
IB
500
mA
Ptot
1.5
W
Tj,Tstg
-55 to +150
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