FCX617 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR

SMD Type
Switching Transistor
FCX617
Transistors
Features
2W power dissipation.
12A peak pulse current.
Excellent HFE characteristics up to 12 amps.
Extremely low saturation voltage E.g. 8mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 50mÙ at 3A.
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
0.48+0.1
-0.1
0.53+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Symbol
Rating
Unit
VCBO
15
V
VCEO
15
V
VEBO
5
V
IC
3
A
ICM
12
A
Base current
Power dissipation
Operating and storage temperature range
IB
500
mA
Ptot
1
W
Tj,Tstg
-55 to +150
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
1. Base
2. Collector
3. Emiitter
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