FCX591_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
FCX591 (KCX591)
Transistors
■ Features
● Collector Current Capability IC=-1A
● Collector Emitter Voltage VCEO=-60V
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-80
VCEO
-60
V
VEBO
-5
IC
-1
A
PC
0.5
W
TJ
150
℃
Tstg
-65 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain (Note.1)
Collector output capacitance
Transition frequency
Note.1: Pulse width=300s. Duty cycle ≤ 2%
■ Marking
Marking
P1
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -60 V , IE=0
ICES VCE= -60 V , IE=0
IEBO VEB= -5V , IC=0
IC=-500 mA, IB=-50mA (Note.1)
VCE(sat)
IC= -1 A, IB=- 100mA (Note.1)
VBE(sat) IC= -1 A, IB=- 100mA (Note.1)
VBE VCE= -5V, IC= -1 A (Note.1)
hFE(1) VCE= -5V, IC= -1mA
hFE(2) VCE=- 5V, IC= -500mA
hFE(3) VCE=- 5V, IC= -1 A
hFE(4) VCE=- 5V, IC= -2 A
Cob VCB= -10V, f=1MHz
fT VCE= -10V, IC= -50mA,f=100MHz
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-80
-60
V
-5
-100
-100 nA
-100
-0.3
-0.6
V
-1.2
-1
100
100
300
80
15
10 pF
150
MHz
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