FCX1147A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON POWER (SWITCHING) TRANSISTOR

SMD Type
Transistors
PNP Silicon Power Switching Transistor
FCX1147A
Features
2W power dissipation.
20A peak pulse current.
Excellent HFE characteristics up to 20 Amps.
Extremely low saturation voltage E.g. 25mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 53mÙ at 3A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Symbol
Rating
Unit
VCBO
-15
V
VCEO
-12
V
VEBO
-5
V
ICM
-20
A
Peak pulse current
IC
-3
A
Base current
Power dissipation
Operating and storage temperature range
IB
-500
mA
Ptot
1
W
Tj,Tstg
-55 to +150
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