DAP202U Datasheet, PDF (1/2 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes

SMD Type
Switching Diodes
DAP202U (KAP202U)
Diodes
■ Features
● Four types of packaging are available
● High speed
● Suitable for high packing density layout
● High reliability
1
3
2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Average forward current
Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VRM
VR
IO
IFM
Pd
TJ
Tstg
Rating
80
80
100
300
200
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
VR IR= 100 uA
VF IF= 100mA
IR
VR= 70 V
Cj VR= 6 V, f= 1 MHz
trr
IF=5mA , VR=6V
Unit
V
mA
mW
℃
Min Typ Max Unit
80
V
1.2
0.1 uA
3.5 pF
4 ns
■ Marking
Marking
P
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