CZT5551_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
CZT5551 (KZT5551)
■ Features
● High Voltage
● High Voltage Amplifier Application
SOT-223
6.50±0.2
3.00±0.1
4
1
2
3
Unit:mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Rating
180
160
6
0.6
1
125
150
-55 to 150
Unit
V
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Emitter input capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100uA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 4V , IC=0
IC=10m A, IB=1mA
VCE(sat)
IC=50m A, IB=5mA
IC=10m A, IB=1mA
VBE(sat)
IC=50m A, IB=5mA
hFE(1) VCE= 5V, IC= 1mA
hFE(2) VCE= 5V, IC= 10mA
hFE(3) VCE= 5V, IC= 50mA
Cob VCB= 10V, IE= 0,f=1MHz
Cib VBE=0.5V, IC=0, f=1MHz
fT
VCE= 10V, IC= 10mA,f=1MHz
Min Typ Max Unit
180
160
V
6
50
nA
50
0.15
0.2
V
1
1
80
80
250
30
6
pF
20
100
300 MHz
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