CZT5551 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

SMD Type
Transistors
NPN Silicon Transistor
CZT5551
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
Features
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
ÈJA
1
2
3
2.9
4.6
0.70+0.1
-0.1
Rating
180
160
6
600
2
-65 to 150
62.5
Unit
V
V
V
mA
W
/W
Electrical Characteristics Ta = 25
Symbol
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
fT
Cob
Cib
hfe
NF
Testconditons
VCB=120V
VCB=120V, TA=100
VEB=4.0V
IC=100ìA
IC=1.0mA
IE=10ìA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200ìA, RS=10
Ù,f=10Hz to 15.7kHz
Min Max Unit
50 nA
50 mA
50 nA
180
V
160
V
6.0
V
0.15 V
0.20 V
1.00 V
1.00 V
80
80 250
30
100 300 MHz
6.0 pF
20 pF
50 200
8.0 dB
1 Base
2 Collector
3 Emitter
4 Collector
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