CZT5401_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
CZT5401 (KZT5401)
■ Features
● High Voltage
● High Voltage Amplifier Application
SOT-223
Transistors
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
0.250
Gauge Plane
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-160
-150
-5
-0.6
1
125
150
-55 to 150
1.Base
2.Collector
4.60 (typ)
0.70±0.1
3.Emitter
4.Collector
Unit
V
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100uA， IE= 0
VCEO Ic= -1 mA， IB= 0
VEBO IE= -100 uA， IC= 0
ICBO VCB= -120 V , IE= 0
IEBO VEB= -4V , IC=0
IC=-10 mA, IB=-1mA
VCE(sat)
IC=-50 mA, IB=-5mA
IC=-10 mA, IB=-1mA
VBE(sat)
IC=-50 mA, IB=-5mA
hFE(1) VCE= -5V, IC= -1mA
hFE(2) VCE= -5V, IC= -10mA
hFE(3) VCE= -5V, IC= -50mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -10mA,f=100MHz
Min Typ Max Unit
-160
-150
V
-5
-50
nA
-50
-0.2
-0.5
V
-1
-1
50
60
300
50
6 pF
100
300 MHz
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