CZT3055_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
CZT3055 (KZT3055)
Transistors
■ Features
● High Current
● Low Voltage
● Surface Mounted Power Amplifier Application
● Complement to CZT2955
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
100
60
7
6
1
125
150
-55 to 150
Unit
V
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 1mA， IE= 0
VCEO
Ic= 30 mA， IB= 0
Ic= 30 mA， IB= 0 , RBE=100Ω
VEBO IE= 1 mA， IC= 0
ICBO VCB= 100 V , IB= 0
ICEO VCE= 30 V , IE= 0
ICEV VCE= 100 V , VEB= 1.5V
IEBO VEB= 7V , IC=0
VCE(sat) IC=4 A, IB=400mA
VBE(sat) IC=4 A, IB=400mA
VBE VCE= 4V, IC= 4A
hFE(1) VCE= 4V, IC= 4A
hFE(2) VCE= 4V, IC= 6A
fT
VCE= 10V, IC= 500mA,f=1MHz
Min Typ Max Unit
100
60
V
70
7
100
uA
700
1 mA
5 mA
1.1
1.2 V
1.5
20
70
5
2.5
MHz
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