CZT2000 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR

SMD Type
Transistors
Features
PNP Silicon Extremely High Voltage
Darlington Transistor
CZT2000
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
ÈJA
Rating
200
200
10
600
2
-65 to 150
62.5
Unit
V
V
V
mA
W
/W
Electrical Characteristics Ta = 25
Symbol
ICBO
IEBO
BVCES
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
Testconditons
VCB=180V
VBE=10V
IC=1.0mA
IC=20mA, IB=25ìA
IC=80mA, IB=40ìA
IC=160mA, IB=100ìA
VCE=5.0V, IC=160mA
VCE=5.0V, IC=100ìA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=160mA
Min Max Unit
500 nA
100 nA
200
V
0.9 V
1.1 V
1.2 V
2.0 V
3,000
3,000
3,000
www.kexin.com.cn ¹