CZT127_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
CZT127 (KZT127)
■ Features
● Silicon Power Darlington Transistors
● Low speed switching and amplifier applications
● Complementary to CZT122
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
-100
VCEO
-100
V
VEBO
-5
IC
-5
A
PC
1
W
TJ
150
℃
Tstg
-65 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1mA， IE= 0
VCEO Ic= -30 mA， IB= 0
VEBO IE= -1 mA， IC= 0
ICBO VCB= -100 V , IE= 0
ICEO VCE= -50 V , IE= 0
IEBO VEB= -5V , IC=0
IC=-3 A, IB=-12mA
VCE(sat)
IC=-5 A, IB=-20mA
VBE(sat) IC=-5 A, IB=-20mA
VBE(on) VCE= -3V, IC= -3A
hFE(1) VCE= -3V, IC= -500mA
hFE(2) VCE= -3V, IC= -3A
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -4V, IC= -3A,f=1MHz
Min Typ Max Unit
-100
-100
V
-5
-200
uA
-500
-2 mA
-2
-4
V
-1.2
-2.5
1000
1000
200 pF
4
MHz
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