CXTA44_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
CXTA44 (KXTA44)
Transistors
■ Features
● Low Collector-Emitter Saturation Voltage
● High Breakdown Voltage
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
RθJA
TJ
Tstg
Rating
400
400
6
200
300
500
250
150
-55 to 150
Unit
V
mA
mA
mW
℃/W
℃
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 400 V , IE= 0
Emitter cut-off current
IEBO VEB= 4V , IC=0
IC=1 mA, IB=0.1mA
Collector-emitter saturation voltage (Note.1) VCE(sat) IC=10 mA, IB=1mA
IC=50 mA, IB=5mA
Base - emitter saturation voltage
VBE(sat) IC=10 mA, IB=1mA (Note.1)
VCE= 10V, IC= 1mA
DC current gain
(Note.1)
VCE= 10V, IC= 10mA
hFE
VCE= 10V, IC= 50mA
VCE= 10V, IC= 100mA
Collector intput capacitance
Cib VBE=0.5V, IC=0, f=1MHz
Collector output capacitance
Cob VCB= 20V, IE=0, f=1MHz
Note.1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
■ Marking
Marking
A44
Min Typ Max Unit
400
400
V
6
100
nA
100
0.4
0.5
V
0.75
0.75
40
50
200
45
40
7
pF
130
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