CXT5551_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
CXT5551 (KXT5551)
Transistors
Features
High current (max. 600mA).
Low voltage (max. 160 V).
● Comlementary to CXT5401
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VCBO
180
VCEO
160
V
VEBO
6
IC
600
mA
PC
500
mW
TJ
150
℃
Tstg
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic=1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 5V , IC=0
IC=10 mA, IB=1mA
VCE(sat)
IC=50 mA, IB=5mA
IC=10 mA, IB=1mA
VBE(sat)
IC=50 mA, IB=5mA
VCE= 5V, IC= 1mA
hFE VCE= 5V, IC= 10mA
VCE= 5V, IC= 50mA
NF
VCE=5V,Ic=0.2mA,
f=10Hzto15.7KHZ,Rs=10Ω
Cob VCB= 10V, IE=0,f=1MHz
fT
VCE= 10V, IC= 10mA,f=100MHz
Min Typ Max Unit
180
160
V
6
50
nA
50
0.15
0.2
V
1
1
80
80
300
30
8 dB
6 pF
100
MHz
■ Marking
Marking
5551
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