CR05AS Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

SMD Type
Silicon Controlled Rectifiers
CR05AS
Thyristor
■ _Features
● Blocking Voltage to 400 V
● High Surge Current Capability — 10 A
● Glass-Passivated Surface for Reliability and Uniformity
A
1.70 0.1
0.42 0.1
0.46 0.1
G
K
1.Gate
2.Anode
3.Cathode
■ _{Absolute Maximum Ratings Ta = 25}℃
Parameter
Peak Repetitive Forward and Reverse Blocking Voltage
(TJ = 25 to 125℃, RGK = 1 K Ω)
Forward Current RMS
Average on-state current
Peak Forward Surge Current, TA = 25℃
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power ─ Forward, TA = 25℃
Average Gate Power ─ Forward, TA = 25℃
Peak Gate Current ─ Forward, TA = 25℃ (300 ms, 120 PPS)
Peak Gate Voltage ─ Reverse
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
Lead Solder Temperature(＜1/16"from case, 10 s max)
Symbol
VDRM
and
VRRM
IT (RMS )
IT (AV)
IT SM
I²t
PGM
PGF (AV)
IGFM
VGRM
RθJA
RθJC
TJ
Tstg
Rating
400
0.8
0.5
10
0.415
0.1
0.01
0.1
6
200
75
-40 to +125
-40 to +150
260
Unit
V
A
A
A
A² s
W
W
A
V
℃/W
℃/W
℃
℃
℃
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