CP380-3_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
CP380
■ Features
● Collector Current Capability IC=50mA
● Collector Emitter Voltage VCEO=30V
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
35
VCEO
30
V
VEBO
4
IC
50
mA
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 35 V , IE= 0
IEBO VEB= 4V , I C=0
VCE(sat) IC=10 mA, IB=1mA
VBE(sat) IC=10 mA, IB=1mA
hFE VCE= 12V, IC= 2mA
Cob VCB= 10V, IE=0,f=1MHz
fT
VCE= 10V, IE= -1mA
Min Typ Max Unit
35
30
V
4
0.1
uA
1
0.4
V
1.2
70
240
3.2 pF
100
MHz
■ Classification of hfe
Type
CP380-O
CP380-Y
Range
70-140
120-240
Marking
380
www.kexin.com.cn ¹