BSS87 Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

SMD Type
N-Channel MOSFET
BSS87 (KSS87)
MOSFET
■ Features
● VDS (V) = 200V
● ID = 0.28 A (VGS = 10V)
● RDS(ON) ＜ 6Ω (VGS = 10V)
● High-speed switching
d
● No secondary breakdown.
g
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
s
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
200
±20
0.28
1.1
1
125
150
-65 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
td(off)
Test Conditions
ID=250μA, VGS=0V
VDS=60V, VGS=0V
VDS=200V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS , ID=1mA
VGS=10V, ID=0.4A
VDS=25V, ID=0.4A
VGS=0V, VDS=25V
VGS=0 to 10V, VDS=50V, ID=250mA
Unit
V
A
W
℃/W
℃
Min Typ Max Unit
200
V
0.2
uA
60
±100 nA
0.8
2.8 V
6
Ω
350
mS
60
25 pF
10
10
ns
25
■ Marking
Marking
KA
www.kexin.com.cn ¹