BSS64 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistor

SMD Type
TransistIoCrs
NPN General Purpose Amplifier
BSS64
Features
NPN general purpose amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Total device dissipation
Derate above 25
Thermal resistance, junction to ambient
Symbol
VCE0
VCBO
VEBO
IC
Tj
Tstg
PD
RèJA
Rating
80
120
5
200
150
-55 to +150
350
2.8
357
Unit
V
V
V
mA
mW
mW/
/W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-cutoff current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain - bandwidth product
Output capacitance
Symbol
Testconditons
V(BR)CEO IC = 4.0 mA, IB = 0
V(BR)CBO IC = 100 ìA, IE = 0
V(BR)EBO IE = 100 ìA, IC = 0
ICBO
VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, TA = 150
IEBO VEB = 5.0 V, IC = 0
hFE IC = 10 mA, VCE = 1.0 V
IC = 4.0 mA, IB = 400ìA
VCE(sat)
IC = 50 mA, IB = 15 mA
VBE(sat) IC = 4.0 mA, IB = 400 ìA
fT
IC = 4.0 mA, VCE = 10,f = 35 MHz
Cob VCB = 10 V, f = 1.0 MHz
Min Typ Max Unit
80
V
120
V
5
V
0.1 ìA
50 ìA
200 nA
20
0.15 V
0.2 V
1.2 V
60
MHz
5
pF
Marking
Marking
U3
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