BSS138 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SMD Type
N-Channel MOSFET
BSS138 (KSS138)
MOSFET
■ Features
● VDS (V) = 50V
● ID = 200 mA (VGS = 10V)
● RDS(ON) ＜ 3.5Ω (VGS = 10V)
● Fast Switching Speed
● Low On-Resistance
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate Voltage RGS≤ 20KΩ
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
Symbol
VDS
VDG
VGS
ID
PD
RthJA
TJ
Tstg
Rating
50
50
±20
200
300
417
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
td(off)
Test Conditions
ID=250μA, VGS=0V
VDS=50V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=220mA
VDS=25V, ID=0.2A,f=1KHz
VGS=0V, VDS=10V, f=1MHz
VDS=30V, ID=0.2A,RG=50Ω
Min Typ Max Unit
50
V
0.5 μA
±100 nA
0.5
1.5 V
3.5 Ω
100
mS
50
25 pF
8
20
ns
20
■ Marking
Marking
K38**
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