BSP230 Datasheet, PDF (1/4 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor

SMD Type
MOSFET
P-Channel MOSFET
BSP230 (KSP230)
■ Features
● VDS (V) =-300V
● ID =-0.21 A (VGS =-10V)
● RDS(ON) ＜ 17Ω (VGS =-10V)
● High-speed switching
D
G
S
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Gate
2.Drain
3.Source
4.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
-300
±20
-0.21
-0.75
1.5
83.3
150
-65 to 150
Unit
V
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
td(off)
Test Conditions
ID=-250μA, VGS=0V
VDS=-240V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS ID=-1mA
VGS=-10V, ID=-170mA
VDS=-25V, ID=-170mA
VGS=0V, VDS=-25V, f=1MHz
VGS=0 to -10V, VDS=-50 V, ID=-250mA
Min
-300
-1.7
100
Typ Max Unit
V
-100 nA
±100 nA
-2.55 V
17 Ω
ms
90
30 pF
15
10
ns
30
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