BSP16 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

SMD Type
Transistors
PNP High-Voltage Transistor
BSP16
Features
High voltage (max. 350 V).
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
collector-base voltage (open emitter)
VCBO
-350
V
collector-emitter voltage (open base)
VCEO
-300
V
emitter-base voltage (open collector)
VEBO
-6
V
collector current (DC)
IC
-200
mA
base current (DC)
IB
-200
mA
total power dissipation Tamb 25 *
Ptot
1.28
W
storage temperature
Tstg
-65 to 150
junction temperature
Tj
150
operating ambient temperature
Tamb
-65 to 150
thermal resistance from junction to ambient *
Rth j-a
97
K/W
thermal resistance from junction to soldering point
Rth j-s
16
K/W
* . Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad
for collector 1 cm².
Electrical Characteristics Ta = 25
Parameter
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
Symbol
ICBO
IEBO
hFE
VCEsat
Cc
fT
Testconditons
Min Typ Max Unit
IE = 0; VCB = -280 V
-100 nA
IC = 0; VEB = -6 V
-100 nA
IC = -50 mA; VCE = -10 V
30
120
IC = -50 mA; IB = -5 mA
-2 V
IE = ie = 0; VCB = -10 V; f = 1 MHz
15 pF
IC = -10 mA; VCE = -10 V; f = 100 MHz 15
MHz
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