BSN20 Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

SMD Type
N-Channel MOSFET
BSN20
MOSFET
■FFeeaatutureress
● ^{TrenchMOS™ technology}
● ^{Very fast switching}
● Logic level compatible
● ^{Subminiature surface mount package.}
d
g
s
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
S ym bo l
Rat ing
Un it
Drain-source voltage
Gate-Source Voltage
VDS
50
V
V GS
±20
Continuous Drain Current
Ta = 25℃
ID
Ta = 100℃
173
110
mA
Pulsed Drain Current
IDM
700
Power dissipation
TA = 25℃
PD
0. 83
W
Maximum Junction-to-Ambient
Thermal resistance from junction to solder point
RthJA
350
K/W
RthJP
150
Operating and storage junction temperature range
TJ, Tstg
- 65+150
℃
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