BSH105 Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel enhancement mode MOS transistor

SMD Type
N-Channel MOSFET
BSH105 (KSH105)
MOSFET
■ Features
● VDS (V) = 20V
● ID = 1.05 A (VGS = 10V)
● RDS(ON) ＜ 200mΩ (VGS = 4.5V)
● RDS(ON) ＜ 250mΩ (VGS = 2.5V)
● RDS(ON) ＜ 300mΩ (VGS = 1.8V)
D
G
S
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate voltage (RGS = 20 KΩ)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Ta=25℃
Ta=100℃
Ta=25℃
Ta=100℃
Symbol
VDS
VDGR
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
20
20
±8
1.05
0.67
4.2
417
170
300
150
-55 to 150
Unit
V
A
mW
℃/W
℃
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