BFS19 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium frequency transistor

SMD Type
Transistors
NPN Medium Frequency Transistor
BFS19
Features
Low current (max. 30 mA)
Low Voltage (max. 20 V)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings TA=25
Parameter
Symbol
Max
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
30
mA
Peak collector current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
ICM
30
mA
Ptot
250
mW
Tstg
150
Tj
150
Tamb
150
1.Base
2.Emitter
3.collector
Electrical Characteristics TA=25
Parameter
Collector-base Breakdown voltage
Collector-emitter Breakdown voltage
Emitter-base Breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Emitter-base voltage
Transition frequency
Collector capacitance
Feedback capacitance
3
Symbol
Test conditions
BVCBO IC = 100 ìA , IE = 0
BVCEO IC = 1mA , IB = 0
BVEBO IE = 100 ìA , IC = 0
ICBO
VCB = 20 V , IE = 0
VCB = 20 V , IE = 0, Tj = 100
IEBO VEB = 5.0 V , IC = 0
hFE VCE = 10 V , IC = 1.0 mA
VBE VCE = 10 V , IC = 1.0 mA
fT VCE = 10 V , IC = 1 mA ,f = 100 MHZ
CC VCB = 10 V , IE = 1 mA ,f = 1 MHZ
Cre VCB = 10 V , IC = 0 mA, f = 1 MHz
Min Typ Max Unit
30
V
20
V
5
V
100 nA
10 ìA
100 nA
65
225
650
740 mV
260
MHz
1
pF
0.85
pF
Marking
Marking
F2
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