BF821 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistors

SMD Type
Transistors
PNP High-Voltage Transistors
BF821,BF823
Features
Low current (max. 50 mA)
High voltage (max. 300 V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
BF821
-300
V
VCBO
BF823
-250
V
Collector-emitter voltage
BF821
-300
V
VCEO
BF823
-250
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-50
mA
Peak collector current
ICM
-100
mA
Peak base current
IBM
-50
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient * Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage
Feedback capacitance
Transition frequency
Symbol
Testconditons
ICBO
IE = 0; VCB = -200 V
IE = 0; VCB = -200 V; Tj = 150
IEBO IC = 0; VEB = -5 V
hFE IC = -25 mA; VCE = -20 V
VCEsat IC = -30 mA; IB = -5 mA
Cre IC = ic = 0; VCB = -30 V; f = 1 MHz
fT
IC = -10 mA; VCE = -10 V; f = 100 MHz
Min Typ Max Unit
-10 nA
-10 ìA
-50 nA
50
-800 mV
1.6 pF
60
MHz
hFE Classification
TYPE
Marking
BF821
1W
BF823
1Y
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