BF820W Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistors

SMD Type
Transistors
NPN High-Voltage Transistor
BF820W
Features
Low current (max. 50 mA)
High voltage (max. 300 V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage (open emitter)
VCBO
300
V
Collector-emitter voltage (open base)
VCEO
300
V
Emitter-base voltage (open collector)
VEBO
5
V
Collector current
IC
50
mA
Peak collector current
ICM
100
mA
Peak base current
IBM
50
mA
Total power dissipation * Tamb 25
Ptot
200
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
625
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Feedback capacitance
Transition frequency
* Pulse test: tp 300 ìs; ä 0.02.
Marking
Marking
1V
Symbol
Testconditons
ICBO
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150
IEBO IC = 0; VEB = 5 V
hFE IC = 25 mA; VCE = 20 V
VCEsat IC = 30 mA; IB = 5 mA
Cre IC = 0; VCB = 30 V; f = 1 MHz
fT
IC = 10 mA; VCE = 10 V; f=100MHz
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
10 nA
10 ìA
50 nA
50
600 mV
1.6 pF
60
MHz
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