BCX20 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor Switching and Amplifier Applications

SMD Type
TransistIoCrs
NPN General Purpose Transistors
BCX20
Features
General Purpose Transistors.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCES
30
V
VCEO
25
V
VEBO
5
V
IC
800
A
Pc
310
W
Tj
150
Tstg
-65 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BVCEO
BVCES
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Testconditons
IC = 10mA, IB = 0
IC = 100ìA, VBE = 0
IE = 10ìA, IC = 0
VCE = 20V, VBE = 0
VBE =5V, IC = 0
VCE = 1V, IC = 100mA
VCE = 1V, IC = 300mA
VCE = 1V, IC = 500mA
IC = 500mA, IB = 50mA
VCE = 1A, IB = 500mA
Min Max Unit
25
V
30
V
5
V
100 nA
10 nA
100 600
70
40
0.62 V
1.2 V
Marking
Marking
U2
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