BCX19 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

SMD Type
TransistIoCrs
NPN General Purpose Transistors
BCX19
Features
High current (max. 500 mA).
Low voltage (max. 45 V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICM
1
A
Peak base current
IBM
200
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage
Base to emitter voltage *
Collector capacitance
Transition frequency
* Pulse test: tp 300 ìs; d 0.02.
Symbol
Testconditons
ICBO IE = 0; VCB = 20 V
ICBO IE = 0; VCB = 20 V; Tj = 150
IEBO IC = 0; VEB = 5 V
IC = 100mA; VCE = 1 V
hFE IC = 300 mA;VCE = 1 V
IC = 500 mA;VCE = 1 V
VCE(sat) IC = 500 mA; IB = 50 mA
VBE IC = 500 mA; VCE = 1 V
CC IE = ie = 0; VCB = 10 V; f = 1 MHz
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
Marking
Marking
U1
Min Typ Max Unit
100 nA
5
ìA
100 nA
100
600
70
40
620 mV
1.2 V
5
pF
100
MHz
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