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BC856 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors
SMD Type
TransistIoCrs
PNP General Purpose Transistor
BC856,BC857,BC858
Features
Low current (max. 100 mA).
Low voltage (max. 65 V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
BC856
Collector-base voltage
VCBO
-80
Collector-emitter voltage
VCEO
-65
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Peak base current
IBM
Total power dissipation *
Ptot
Junction temperature
Tj
Storage temperature
Tstg
Operating ambient temperature
Ramb
Thermal resistance from junction to ambient *
Rth j-a
* Transistor mounted on an FR4 printed-circuit board, standard footprint.
BC857
-50
-45
-5
-100
-200
-200
250
150
-65 to +150
-65 to +150
500
BC858
-30
-30
1.Base
2.Emitter
3.collector
Unit
V
V
V
mA
mA
mA
mW
K/W
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