BC846 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

SMD Type
TransistIoCrs
NPN General Purpose Transistor
BC846,BC847,BC848
Features
Low current (max. 100 mA).
Low voltage (max. 65 V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
BC846 BC847 BC848
Unit
Collector-base voltage
VCBO
80
50
30
V
Collector-emitter voltage
VCEO
65
45
30
V
Emitter-base voltage
VEBO
6
6
5
V
Collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
mA
Total power dissipation *
Ptot
250
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board, standard footprint.
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