BC818_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
BC818 (KC818)
Transistors
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
● Complementary PNP type available(BC808)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Symbol
Rating
Unit
V CBO
30
V
V CEO
25
V
V EBO
5
V
IC
800
mA
PD
300
mW
Tj
150
T stg
-65 to +150
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW 350 us, duty cycle 2%
Symbol
Test conditions
VCBO
VCEO
IC = 100u A,VBE = 0
IC = 10 mA, IB = 0
VEBO
ICBO
IE = 100 uA, IC = 0
VCB =25 V, VBE= 0
IEBO VEB =4 V, IC = 0
IC =100 mA, VCE =1 V
hFE
IC =300 mA, VCE =1 V
VCE(sat) IC =500 mA, IB = 50 mA
VBE(on) VCE=1V,IC=300mA
Cob VCB=10V,f=1MHz
fT IC = 10 mA, VCE =5 V, f = 50 MHz
Min Typ Max Unit
30
V
25
V
5
V
100 nA
100 nA
100
630
60
0.7 V
1.2 V
12 pF
100
MHz
Marking
NO.
Marking
hFE
BC818-16
6E
100 250
BC818-25
6F
160 400
BC818-40
6G
250 630
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