BC818A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
BC818A (KC818A)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
● Complementary PNP type available(BC808A)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
5
V
IC
500
mA
ICM
1
A
IB
100
mA
PD
310
mW
Tj
150
Tstg
-65 to +150
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW 350 us, duty cycle
BC818A-16
BC818A-25
BC818A-40
2%
Symbol
Test conditions
V CBO IC = 10 A, IE = 0
V CEO IC = 10 mA, IB = 0
VEBO
ICBO
IE = 10 A, IC = 0
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150
IEBO VEB = 4 V, IC = 0
hFE IC = 100 mA, VCE = -1 V
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
CCb VCB = 10 V, f = 1 MHz
Ceb VEB = 0.5 V, f = 1 MHz
fT IC = 50 mA, VCE = 5 V, f = 100 MHz
Marking
NO.
Marking
BC818A-16
6E
BC818A-25
6F
BC818A-40
6G
Min Typ Max Unit
30
V
25
V
5
V
100 nA
50
A
100 nA
100 160 250
160 250 400
250 350 630
0.7 V
1.2 V
6
pF
60
pF
170
MHz
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