BC817_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
BC817 (KC817)
■ Features
● For general AF applications
● Low collector-emitter saturation voltage
●Complementary types: BC807 (PNP)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
50
VCEO
45
V
VEBO
5
IC
0.5
A
PC
0.3
W
TJ
150
℃
Tstg
-55 to 150
Symbol
-
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 45 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=50mA
VBE(sat) IC= 500 mA, IB= 50mA
VBE VCE= 1V, IC= 500mA
hFE(1) VCE= 1V, IC= 100mA
hFE(2) VCE= 1V, IC= 500mA
Cob VCB= 10V, f=1MHz
fT
VCE= 5V, IC= 10mA,f=100MHz
■ Classification of hfe(1)
Type
Range
BC817-16
100-250
Marking
6A
BC817-25
160-400
6B
BC817-40
250-630
6C
Min Typ Max Unit
50
45
V
5
0.1
uA
0.1
0.7
1.2 V
1.2
100
630
40
10
pF
100
MHz
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