BC817W_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
BC817W (KC817W)
Transistors
■ Features
● For General AF Applications
● High Collector Current
● High Current Gain
● Low Collector-Emitter Saturation Voltage
● Complementary to BC807W
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
50
45
5
0.5
0.2
625
150
-55 to 150
Unit
V
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE=0
VCEO Ic= 10 mA， IB=0
VEBO IE= 100μA， IC=0
ICBO VCB= 50 V , IE=0
IEBO VEB= 5V , IC=0
VCE(sat) IC=500 mA, IB=50mA
VBE(sat) IC=500 mA, IB=50mA
VBE(on) VCE= 1V, IC= 500mA
hFE(1) VCE= 1V, IC= 100mA
hFE(2) VCE= 1V, IC= 500mA
Cob VCB= 10V,f=1MHz
fT
VCE= 5V, IC= 10mA,f=100MHz
Min Typ Max Unit
50
45
V
5
0.1
uA
0.1
0.7
1.2 V
1.2
100
600
40
5 pF
100
MHz
■ Classification of hfe(1)
Type
BC817W-16
Range
100-250
Marking
6A
BC817W-25
160-400
6B
BC817W-40
250-600
6C
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