BC817A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
BC817A (KC817A)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
● Complementary PNP type available(BC807A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Rating
50
45
5
500
1
100
310
150
-65 to +150
Transistors
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit
V
V
V
mA
A
mA
mW
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Test conditions
Collector to base breakdown voltage
V CBO IC = 10 A, IE = 0
Collector to emitter breakdown voltage
V CEO IC = 10 mA, IB = 0
Emitter to base breakdown voltage
VEBO ^{IE = 10 A, IC = 0}
Collector cutoff current
ICBO
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150
Emitter cutoff current
IEBO VEB = 4 V, IC = 0
BC817A-16
DC current gain *
BC817A-25
hFE IC = 100 mA, VCE = -1 V
BC817A-40
Collector saturation voltage *
VCE(sat) IC = 500 mA, IB = 50 mA
Base to emitter voltage *
VBE(sat) IC = 500 mA, IB = 50 mA
Collector-base capacitance
CCb VCB = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb VEB = 0.5 V, f = 1 MHz
Transition frequency
fT IC = 50 mA, VCE = 5 V, f = 100 MHz
* Pulsed: PW 350 us, duty cycle 2%
■ Classification of hfe
Type
BC817A-16
BC817A-25
BC817A-40
Range
100-250
160-400
250-630
Marking
6A
6B
6C
Min Typ Max Unit
50
V
45
V
5
V
100 nA
50
A
100 nA
100 160 250
160 250 400
250 350 630
0.7 V
1.2 V
6
pF
60
pF
170
MHz
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