BC808A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
BC808A (KC808A)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
● Complementary NPN type available(BC818A)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
Total power dissipation
Storage temperature
Junction temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-5
V
IC
-500
mA
ICM
-1
A
IB
-100
mA
Ptot
310
mW
Tstg
-65 to +150
Tj
150
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
BC808A-16
BC808A-25
BC808A-40
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW 350 us, duty cycle 2%
■ Classification of hfe
Type
BC808A-16
BC808A-25
Symbol
Test conditions
VCBO IC = -10 µA, IE = 0
VCEO IC = -10 mA, IB = 0
VEBO ^{IE = -10 µA, IC = 0}
ICBO
VCB = -25 V, IE = 0
VCB = -25 V, IE = 0 , TA = 150
IEBO VEB = -4 V, IC = 0
hFE IC = -100 mA, VCE = -1 V
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
CCb VCB = -10 V, f = 1 MHz
Ceb VEB = -0.5 V, f = 1 MHz
fT IC = -50 mA, VCE = -5 V, f = 100 MHz
BC808A-40
Range
100-250
160-400
250-630
Marking
5E
5F
5G
Min Typ Max Unit
-30
V
-25
V
-5
V
-100 nA
-50
A
-100 nA
100 160 250
160 250 400
250 350 630
-0.7 V
-1.2 V
10
pF
60
pF
200
MHz
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