BC807W_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
BC807W (KC807W)
Transistors
■ Features
● Ldeally suited for automatic insertion
● Epitaxial planar die construction
● Complementary to BC817W
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-50
-45
-5
-0.5
0.2
625
150
-55 to 150
Unit
V
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
ICEO VCE= -20 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC= -500 mA, IB=- 50mA
hFE(1) VCE= -1V, IC= -100mA
hFE(2) VCE=- 1V, IC= -500mA
Cob VCB= -10V,f=1MHz
fT
VCE= -5V, IC= -10mA,f=100MHz
■ Classification of hfe(1)
Type
BC807W-16
Range
100-250
Marking
5A
BC807W-25
160-400
5B
BC807W-40
250-600
5C
Min Typ Max Unit
-50
-45
V
-5
-0.1
-0.2 uA
-0.1
-0.7
V
-1.2
100
600
40
10 pF
80
MHz
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