BAV74 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

SMD Type
High-speed double diode
BAV74
Diodes
Features
Small plastic SMD package
High switching speed: max.4 ns
Continuous reverse voltage: max. 50 V
Repetitive peak reverse voltage: max. 60 V
Repetitive peak forward current: max. 450 mA
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Repetitive peak reverse voltage
VRRM
Continuous reverse voltage
VR
Continuous forward current
single diode loaded; Note 1
IF
double diode loaded; Note 1
Repetitive peak forward current
IFRM
square wave;Tj = 25 prior to surge;
Non-repetitive peak forward current
IFSM
t=1 s
t = 1 ms
t=1s
Total power dissipation
Ptot
Tamb = 25 ; Note 1
Storage temperature
Tstg
-65
Junction temperature
Tj
thermal resistance from junction to tie-point Rth j-tp
thermal resistance from junction to ambient Rth j-a
Note
1. Device mounted on an FR4 printed-circuit board.
Max
Unit
60
V
50
V
215
mA
125
450
mA
4
A
1
0.5
250
mW
+150
150
360
K/W
500
K/W
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