BAT68W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching)

SMD Type
Silicon Schottky Diodes
BAT68W
Diodes
Features
For mixer applications in the VHF/UHF range
For high speed switching
Absolute Maxim um Ratings Ta = 25
P aram eter
Diode reverse voltage
Forward current
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature
Junction - ambient (Note 1)
Junction - soldering point
TS = 97
Sym bol
VR
IF
P tot
Tj
Top
Tstg
R thJA
R thJS
Value
8
150
150
150
-65 to+150
-65 to+150
435
355
Electrical Characteristics Ta = 25
P aram eter
Breakdown voltage
Symbol
V(BR)
Reverse current
IR
Forward voltage
VF
Diode capacitance
CT
Differential forward resistance
RF
Conditions
I(BR) = 100 µA
VR = 1 V, TA = 25
VR = 1 V, TA = 60
IF = 1 mA
IF = 10 mA
VR = 1 V, f = 1 MHz
IF = 5 mA
Unit
V
mA
mW
K/W
K/W
Min
Typ
Max
Unit
8
V
0.1
A
1.2
318
340
mV
340
390
500
1
pF
10
Marking
Marking
83s
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