BAT17 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

SMD Type
Schottky barrier diode
BAT17
Diodes
Features
Low forward voltage
Small SMD package
Low capacitance.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Storage temperature
Junction temperature
thermal resistance from junction to ambient
Symbol
VR
IF
Tstg
Tj
Rth j-a
Min
-65
Max
4
30
+150
100
500
Unit
V
mA
K/W
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
S ym bol
C o n d itio n s
Max
U n it
IF =0.1 mA
350
Forward voltage
VF
IF = 1 mA
450
mV
IF = 10 mA
600
Reverse current
VR = 3 V
IR
VR = 3 V; Tamb = 60
0.25
A
1.25
Diode forward resistance
rD
f = 1 KHz; IF = 5 mA
15
Diode capacitance
Cd
f = 1 MHz; VR = 0
1
pF
noise figure
F
f = 900 MHz; Note 1
8
dB
N o te
1. The local oscillator is adjusted for a diode current of 2 m A. IF am plifier noise Fif = 1.5 dB; f = 35 M Hz.
Marking
Marking
A3p
www.kexin.com.cn ¹