BAT17-04W Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon Schottky Diode

SMD Type
Silicon Schottky Diode
BAT17-04W,BAT17-05W,BAT17-06W
Diodes
Features
For mixer applications in VHF/UHF range
For high-speed switching application
Absolute Maxim um Ratings Ta = 25
P aram eter
Sym bol
Value
Diode reverse voltage
VR
4
Forward current
IF
130
Total power dissipation
TS 92
P tot
150
Junction temperature
Tj
150
Operating temperature range
Top
-55 to +125
Storage temperature
Tstg
-55 to +150
Junction - soldering point(Note 1)
R thJS
390
Note
1.For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
K/W
Electrical Characteristics Ta = 25
P aram eter
Sym bol
Conditions
Min
Breakdown voltage
V(BR)
I(BR) = 10 A
4
VR = 3 V
Reverse current
IR
VR = 4 V
VR = 3 V, TA = 60
IF = 0.1 mA
200
Forward voltage
VF
IF = 1 mA
250
IF = 10 mA
350
Forward voltage matching(Note 1)
ÄVF
IF = 1 mA
Diode capacitance
CT
VR = 0 , f = 1 MHz
0.4
Differential forward resistance
RF
IF = 5 mA, f = 10 KHz
Note
1.ÄVF is the difference between lowest and highest VF in multiple diode component.
Typ
275
340
425
0.55
8
Max
0.25
10
1.25
350
450
600
20
0.75
15
Unit
V
A
mV
mV
pF
Marking
Type
Marking
BAT17-04W BAT17-05W BAT17-06W
54S
55S
56S
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