BAT15-03W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)

SMD Type
Silicon Schottky diode
BAT15-03W
Diodes
Features
DBC mixer applications to 12 GHz
Low noise figure
Low barrier type
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Diode reverse voltage
Forward current
Total power dissipation
Ts = 70
Operating temperature range
Storage temperature
Junction ambient ⁽¹⁾
Junction-soldering point
Note:
1.Package mounted on an epoxy pcb 40 mm 40 mm
Symbol
VR
IF
Ptot
Top
Tstg
RthJA
RthJS
Value
4
100
100
-55 to+150
-55 to+150
770
690
15 mm/1cm² Cu.
Electrical C haracteristics T a = 25
Param eter
Breakdown Voltage
I(BR) = 5 A
Forward voltage
IF = 1 m A
IF = 10 m A
Diode capacitance
VR = 0; f = 1 MHz
Differential forward resistance
IF 10 m A/50 m A
Sym bol
V (BR)
VF
CT
RF
M in
4
Unit
V
mA
mW
K/W
K/W
Typ
Max
0.23
0.32
5.5
0.32
0.41
0.35
U n it
V
V
pF
Marking
Marking
P
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