BAT14-099 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)

SMD Type
Silicon Dual Schottky Diode
BAT14-099
Diodes
Features
DBS mixer application to 12 GHz
Low noise figure
Medium barrier type
Unit: mm
Absolute Maxim um Ratings Ta = 25
P aram eter
Reverse voltage
Forward current
Power dissipation, TS 55
Storage temperature range
Operating temperature range
Junction - am bient¹⁾
Junction - soldering point
Note
1.Package mounted on alumina 15 mm
Sym bol
VR
IF
P tot
Tstg
Top
Rth JA
Rth JS
16.7 mm to 0.7 mm.
Value
4
90
100
-55 to +150
-55 to +150
580
340
Unit
V
mA
mW
K/W
K/W
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Symbol
VBR
Forward voltage
VF
Forward voltage matching
ÄVF
Diode capacitance
CT
Forward resistance
RF
Conditions
IR = 5 A
IF = 1 mA
IF = 10 mA
IF = 10 mA
VR = 0 V, f = 1 MHz
IF = 10 mA / 50 mA
Min
Typ
Max
Unit
4
V
0.43
V
0.55
10
mV
0.35
pF
5.5
Marking
Marking
S9
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