BAS70W Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

SMD Type
Schottky barrier(double) diodes
BAS70W;BAS70-04W
BAS70-05W;BAS70-06W
Diodes
Features
Low forward voltage
High breakdown voltage
Guard ring protected
Very small SMD package
Low capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Continuous reverse voltage
VR
Continuous forward current
IF
Repetitive peak forward current
IFRM
tp 1 s; ä 0.5
Non-repetitive peak forward current
IFSM
tp 10 ms
Storage temperature
Tstg
-65
Junction temperature
Tj
Operating ambient temperature
Tamb
-65
Thermal resistance from junction to ambient
Rth j-a
Note 1
Electrical Characteristics Ta = 25
Param eter
Forward Voltage
Sym bol
VF
Reverse Current
IR
Charge carrier life tim e (Krakauer m ethod)
Diode capacitance
Cd
Note
1. Pulse test: tp = 300 m s; d = 0.02.
C o n d itio n
IF = 1 m A
IF = 10 m A
IF = 15 m A
VR = 50 V; note 1
VR = 70 V; note 1
IF = 5 m A
f = 1 MHz; VR = 0
Max
70
70
70
100
+150
150
+150
625
Unit
V
mA
mA
mA
K/W
Max
410
750
1
100
10
100
2
U n it
mV
mV
V
nA
A
ps
pF
Marking
Type
Marking
BAS70W
73*
BAS70-04W
74*
BAS70-05W
75*
BAS70-06W
76*
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